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DDR3 1333/1066/800MHz DRAM Component Validation Results
This information is provided as a guide to component compliance. This testing is not intended to replace the normal OEM component qualification process. Intel encourages memory suppliers to validate their fastest speed/latency component. The slower speed/latency components using the same die revision as the listed fast component may not be explicitly listed in this table. This does not preclude the slower components from being submitted in memory modules for testing if the component has passed testing and has been listed in this table at the fastest speed/latency. Please contact the supplier directly to obtain information regarding the corresponding slower speed/latency parts.
| Validated DDR3 1333/1066/800MHz SDRAM Components | |||||||
|---|---|---|---|---|---|---|---|
| Supplier Part Number |
Density | Width | Freq | Latency CL-tRCD-tRP |
Notes | Component Date Code |
|
| Elpida EDJ1108BDSE-DJ-F |
1Gb | 8 | 1333 | 9-9-9 | - | 0913 | |
| Elpida EDJ1116BBSE-DJ-F, ∇ |
1Gb | 16 | 1333 | 9-9-9 | - | 0846 | |
| Elpida EDJ1108BBSE-DJ-F |
1Gb | 8 | 1333 | 9-9-9 | - | 0846 | |
| Elpida EDJ1104BASE-AE-E |
1Gb | 4 | 1066 | 7-7-7 | - | 0831 | |
| Elpida EDJ1104BASE-DJ-E |
1Gb | 4 | 1333 | 9-9-9 | - | 0831 | |
| Elpida EDJ2204B1MB-AE-E |
1Gb (DDP) | 4 | 1066 | 7-7-7 | - | 0831 | |
| Hynix H5TQ2G43AFR-H9C, ∇, ◊ |
2Gb | 4 | 1333 | 9-9-9 | - | 0904 | |
| Hynix H5TQ2G43AFR-G7C, ◊ |
2Gb | 4 | 1066 | 7-7-7 | - | 0905 | |
| Hynix H5TQ2G83AFR-G7C, ∇, ◊ |
2Gb | 8 | 1066 | 7-7-7 | - | 0905 | |
| Hynix H5TQ1G43BFR-H8C, ◊ |
1Gb | 4 | 1333 | 8-8-8 | - | 0842 | |
| Hynix H5TQ1G43BFR-H9C, ∇, ◊ |
1Gb | 4 | 1333 | 9-9-9 | - | 0842 | |
| Hynix H5TQ2G83AFR-H9C, ∇, ◊ |
2Gb | 8 | 1333 | 9-9-9 | - | 0905 | |
| Hynix H5TQ1G63BFR-H9C, ∇, ◊ |
1Gb | 16 | 1333 | 9-9-9 | - | 0849 | |
| Hynix H5TQ4G83MMR-G7C ‡ ª ¤ |
2Gb (DDP) | 8 | 1066 | 7-7-7 | - | 0836 | |
| Hynix H5TQ1G43AFP-G7C |
1Gb | 4 | 1066 | 7-7-7 | - | 0827 | |
| Hynix H5TQ1G43AFP-H9C, ∇ |
1Gb | 4 | 1333 | 9-9-9 | - | 0827 | |
| Hynix H5TQ2G83MFR-H9C, ∇ |
2Gb | 8 | 1333 | 9-9-9 | - | 0827 | |
| Hynix H5TQ2G43AMP-G7C, ∇ |
1Gb (DDP) | 4 | 1066 | 7-7-7 | - | 0827 | |
| Hynix H5TQ1G43BFR-G7C, ∇, ◊ |
1Gb | 4 | 1066 | 7-7-7 | - | 0835 | |
| Hynix H5TQ1G83BFR-G7C, ∇, ◊ |
1Gb | 8 | 1066 | 7-7-7 | - | 0844 | |
| Hynix H5TQ1G43BFR-G8C, ∇, ◊ |
1Gb | 4 | 1066 | 8-8-8 | - | 0835 | |
| Hynix H5TQ1G83BFR-H8C, ∇, ◊ |
1Gb | 8 | 1333 | 8-8-8 | - | 0849 | |
| Hynix H5TQ1G83BFR-H9C, ∇, ◊ |
1Gb | 8 | 1333 | 9-9-9 | - | 0849 | |
| Hynix H5TQ1G63BFR-G7C, ∇, ◊ |
1Gb | 16 | 1066 | 7-7-7 | - | 0832 | |
| Hynix H5TQ2G83MFR-G7C, ∇ |
2Gb | 8 | 1066 | 7-7-7 | - | 0823 | |
| Hynix H5TQ1G63AFP-G7C, ∇ |
1Gb | 16 | 1066 | 7-7-7 | - | 0813 | |
| Hynix H5TQ1G63AFP-G8C, ∇ |
1Gb | 16 | 1066 | 8-8-8 | - | 0813 | |
| Hynix H5TQ1G83AFP-G7C, ∇ |
1Gb | 8 | 1066 | 7-7-7 | - | 0813 | |
| Hynix H5TQ1G83AFP-G8C, ∇ |
1Gb | 8 | 1066 | 8-8-8 | - | 0813 | |
| Hynix H5TQ1G83AFP-H8C, ∇ |
1Gb | 8 | 1333 | 8-8-8 | - | 0827 | |
| Hynix H5TQ1G83AFP-H9C, ∇ |
1Gb | 8 | 1333 | 9-9-9 | - | 0827 | |
| Micron MT41J256M4JP-15E, ∇ |
1Gb | 4 | 1333 | 9-9-9 | - | 0906 | |
| Micron MT41J128M8JP-187E, ∇ |
1Gb | 8 | 1066 | 7-7-7 | - | 0844 | |
| Micron MT41J128M8JP-15E, ∇ |
1Gb | 8 | 1333 | 9-9-9 | - | 0906 | |
| Micron MT41J256M4HX-187E, ∇ |
1Gb | 4 | 1066 | 7-7-7 | - | 0838 | |
| Micron MT41J256M4HX-15E, ∇ |
1Gb | 4 | 1333 | 9-9-9 | - | 0838 | |
| Micron MT41J512M4THR-187E |
1Gb (DDP) | 4 | 1066 | 7-7-7 | - | 0838 | |
| Micron MT41J128M8HX-187E, ∇ |
1Gb | 8 | 1066 | 7-7-7 | - | 0806 | |
| Nanya NT5CB256M4AN-CG |
1Gb | 4 | 1333 | 9-9-9 | - | 0812 | |
| Nanya NT5CB128M8CN-CG |
1Gb | 8 | 1333 | 9-9-9 | - | 0914 | |
| Nanya NT5CB256M4AN-BE |
1Gb | 4 | 1066 | 7-7-7 | - | 0812 | |
| Nanya NT5CB128M8CN-BE |
1Gb | 8 | 1066 | 7-7-7 | - | 0812 | |
| Nanya NT5CB64M16AP-BE, ∇ |
1Gb | 16 | 1066 | 7-7-7 | - | 0750 | |
| Nanya NT5CB128M8AN-CG |
1Gb | 8 | 1333 | 9-9-9 | - | 0803 | |
| Nanya NT5CB128M8AN-CF |
1Gb | 8 | 1333 | 8-8-8 | - | 0803 | |
| Nanya NT5CB128M8AN-BE |
1Gb | 8 | 1066 | 7-7-7 | - | 0812 | |
| Samsung K4B2G0446B-HCF8, ◊ |
2Gb | 4 | 1066 | 7-7-7 | - | 0846 | |
| Samsung K4B2G0446B-HCH9, ∇, ◊ |
2Gb | 8 | 1333 | 9-9-9 | - | 0846 | |
| Samsung K4B1G0846E-HCF8, ◊ |
1Gb | 8 | 1066 | 7-7-7 | - | 0843 | |
| Samsung K4B1G1646E-HCF8, ∇, ◊ |
1Gb | 16 | 1066 | 7-7-7 | - | 0913 | |
| Samsung K4B1G0446E-HCF8, ◊ |
1Gb | 4 | 1066 | 7-7-7 | - | 0846 | |
| Samsung K4B1G0846E-HCH9, ◊ |
1Gb | 8 | 1333 | 9-9-9 | - | 0843 | Samsung K4B2G0846B-HCH9, ∇, ◊ |
2Gb | 8 | 1333 | 9-9-9 | - | 0837 | Samsung K4B1G1646E-HCH9, ∇, ◊ |
1Gb | 16 | 1333 | 9-9-9 | - | 0913 |
| Samsung K4B1G0446D-HCF7 |
1Gb | 4 | 800 | 6-6-6 | - | 0829 | |
| Samsung K4B1G0446D-HCF8 |
1Gb | 4 | 1066 | 7-7-7 | - | 0829 | |
| Samsung K4B1G0446D-HCH9 |
1Gb | 4 | 1333 | 9-9-9 | - | 0829 | |
| Samsung K4B1G0446E-HCH9, ◊ |
1Gb | 4 | 1333 | 9-9-9 | - | 0846 | |
| Samsung K4B2G0446D-MCF7, µ, Φ, ª |
1Gb (DDP) | 4 | 800 | 6-6-6 | - | 0829 | |
| Samsung K4B2G0446D-MCF8, µ, Φ, ª |
1Gb (DDP) | 4 | 1066 | 7-7-7 | - | 0829 | |
| Samsung K4B2G0846B-HCF8, ◊ |
2Gb | 8 | 1066 | 7-7-7 | - | 0846 | |
| Samsung K4B1G0846D-HCG9, ∇ |
1Gb | 8 | 1333 | 8-8-8 | - | 0808 | |
| Samsung K4B1G0846D-HCH9, ∇ |
1Gb | 8 | 1333 | 9-9-9 | - | 0804 | |
| Samsung K4B1G1646D-HCF8, ∇ |
1Gb | 16 | 1066 | 7-7-7 | - | 0804 | |
| Samsung K4B1G0846D-HCF8, ∇ |
1Gb | 8 | 1066 | 7-7-7 | - | 0808 | |
| Samsung K4B1G1646D-HCF7, ∇ |
1Gb | 16 | 800 | 6-6-6 | - | 0808 | |
| Samsung K4B1G0846D-HCF7, ∇ |
1Gb | 8 | 800 | 6-6-6 | - | 0808 | |
∇ Exceeds maximum VOX specification.
° TDQS feature not functioning; not recommended to be used on RDIMM or UDIMM modules targeting server applications.
± Exceeds minimum Rdie specification.
µ Exceeds IOL/IOH specification.
Φ Exceeds maximum RDL specification.
ª Exceeds maximum LPKG specification.
¤ Exceeds maximum slew rate specification.
◊ Write margin testing was performed at component level by Shmoo testing for voltage and timing, based on limited sampling.